Changxin Memory to Enter NAND Market Beyond DRAM

Chinese memory semiconductor company Changxin Memory (CXMT) is pushing to enter the NAND flash market beyond its core DRAM business, according to Reuters. The report cited multiple sources, noting that Changxin Memory has established a NAND flash research and production line at its new Beijing facility and already set up a research institution in Beijing focused on NAND development. The company is reportedly discussing plans with customers, including emerging firms seeking chips for AI systems and supercomputers. However, the operational launch of the research line or large-scale commercial production timeline remains undetermined, Reuters reported. Industry sources cited by Reuters also anticipate memory shortages will persist at least until 2027 due to rising demand from AI servers, with manufacturers prioritizing DRAM and HBM investments over expanding NAND capacity.

Changxin Memory raised 57.92 billion yuan in its July IPO.