SK Hynix Discusses US Memory Production Partnership with Intel

SK Hynix is reportedly discussing cooperation with Intel to produce memory semiconductors for the first time in the United States, according to Reuters.

On Thursday (local time), Reuters cited multiple sources stating that SK Hynix and Intel are currently negotiating ways to establish memory production within the U.S. SK Hynix told Reuters that it is considering various options to enhance its memory business competitiveness, including building additional production facilities, but no decisions have been made yet.

One proposed plan involves SK Hynix leasing part of Intel's semiconductor manufacturing facility under construction in Ohio. Reuters also reported that discussions are underway about forming a joint venture with Intel and major cloud companies seeking stable memory supply.

The negotiations remain at an early stage, and it has not yet been determined which products—high-bandwidth memory (HBM), DRAM, or NAND flash—will be produced in Ohio if an agreement is reached.

Meanwhile, SK Hynix is currently investing $4 billion in Indiana to build a next-generation HBM packaging facility for assembling DRAM into HBM, which will be used for post-production processing of memory chips manufactured in South Korea and other regions.

If the partnership with Intel materializes, it would mark the first time SK Hynix produces memory semiconductors at full scale within the U.S., according to reports.